We are delighted to be able to share that three of our students will be attending Oxbridge next year. To achieve a place on such highly competitive courses at these prestigious institutions is very challenging, and we couldn’t be prouder of these three students for how they approached the application process and their studies. All three were and will continue to be role model students for their peers and for the younger years who no doubt wish to follow in their footsteps in years to come.
Iqra Taher will be attending Oxford to study Maths at (Magdalen). She achieved 4A* in Chemistry, Maths, Further Maths and Physics. Iqra said, “going to Oxford has been a conscious goal for me since I was nine years old. Seeing the results of seven years’ hard work gives me both a huge sense of relief and euphoria. The past two years have been difficult, however, as strenuous as it was, I can see how much I have grown through this as a person. I could never have done this without the constant support from my loving parents, the dedicated Sixth Form team and the enormous efforts of my teachers – I can’t thank them enough.”
Aryan Tathgar will be attending Cambridge to study History at (Homerton). He achieved A*AA in English, History and Politics. Aryan said, “I am extremely happy with my results as I put in a lot of hard work and had excellent support from the school, I’m glad to see it has paid off and I am on my way to Cambridge”
Aamina Thava will be attending Oxford to study English at (Keble). She achieved A*AA in English, Economics and History. Aamina said, “Receiving a place at Oxford is a milestone that I am incredibly proud of especially after the amount of effort that I have put in over the past two years. It is a pathway I would never have thought about without the support of my teachers, their encouragement gave me the confidence to apply and succeed and I am deeply grateful for the way it has changed my life.”
We wish them the very best of luck as they begin the next steps of their academic careers at Oxford and Cambridge.